PART |
Description |
Maker |
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3) 512Mb (64Mx8) DDR200 (2-2-2) 512Mb (32Mx16) DDR200 (2-2-2) 512Mb (128Mx4) DDR200 (2-2-2) 512Mb (64Mx8) DDR333 (2.5-3-3) ?的512Mb4Mx8DDR333内存.5-3-3)?
|
Electronic Theatre Controls, Inc.
|
DAT40 DAT80 |
(DAT Series) High Voltage / Power Capacitors
|
Murata Electronics
|
HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402 512Mb (32M x 16) PC133 2-2-2 Available Q402 512Mb (32M x 16) PC133 3-3-3 Available Q402 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
HFDOM40C-256S2 HFDOM40C-032S1 HFDOM40C-032S2 HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB,真正的IDE接口模式.3 / 5.0V工作 40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB,真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内 512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HYS64D64020GDL-6-A HYS64D64020GDL-7-A HYS64D64020G |
512MB (64Mx64) PC2100 2-bank 12MB的(64Mx64)PC2100 2银行 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
|
Infineon Technologies AG Unisonic Technologies Co., Ltd.
|
ISS-6 |
VDE-insulated Allen wrench with double-layer insulation, for double the safety
|
PHOENIX CONTACT
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